Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor
魏佳男, 贺朝会, 李培, 李永宏, 郭红霞
Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor
Jia-Nan Wei(魏佳男), Chao-Hui He(贺朝会), Pei Li(李培), Yong-Hong Li(李永宏), Hong-Xia Guo(郭红霞)
中国物理B . 2019, (7): 76106 -076106 .  DOI: 10.1088/1674-1056/28/7/076106