Effect of defects properties on InP-based high electron mobility transistors
孙树祥, 常明铭, 李梦珂, 马刘红, 钟英辉, 李玉晓, 丁芃, 金智, 魏志超
Effect of defects properties on InP-based high electron mobility transistors
Shu-Xiang Sun(孙树祥), Ming-Ming Chang(常明铭), Meng-Ke Li(李梦珂), Liu-Hong Ma(马刘红), Ying-Hui Zhong(钟英辉), Yu-Xiao Li(李玉晓), Peng Ding(丁芃), Zhi Jin(金智), Zhi-Chao Wei(魏志超)
中国物理B
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2019, (7): 78501
-078501
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DOI: 10.1088/1674-1056/28/7/078501