Effect of SiN: H
x passivation layer on the reverse gate leakage current in GaN HEMTs
张昇, 魏珂, 肖洋, 马晓华, 张一川, 刘果果, 雷天民, 郑英奎, 黄森, 汪宁, Muhammad Asif, 刘新宇
Effect of SiN: H
x passivation layer on the reverse gate leakage current in GaN HEMTs
Sheng Zhang(张昇), Ke Wei(魏珂), Yang Xiao(肖洋), Xiao-Hua Ma(马晓华), Yi-Chuan Zhang(张一川), Guo-Guo Liu(刘果果), Tian-Min Lei(雷天民), Ying-Kui Zheng(郑英奎), Sen Huang(黄森), Ning Wang(汪宁), Muhammad Asif, Xin-Yu Liu(刘新宇)
中国物理B
.
2018, (9): 97309
-097309
.
DOI: 10.1088/1674-1056/27/9/097309