High uniformity and forming-free ZnO-based transparent RRAM with HfO
x inserting layer
吴仕剑, 王芳, 张志超, 李毅, 韩叶梅, 杨正春, 赵金石, 张楷亮
High uniformity and forming-free ZnO-based transparent RRAM with HfO
x inserting layer
Shi-Jian Wu(吴仕剑), Fang Wang(王芳), Zhi-Chao Zhang(张志超), Yi Li(李毅), Ye-Mei Han(韩叶梅), Zheng-Chun Yang(杨正春), Jin-Shi Zhao(赵金石), Kai-Liang Zhang(张楷亮)
中国物理B
.
2018, (8): 87701
-087701
.
DOI: 10.1088/1674-1056/27/8/087701