Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation
潘霄宇, 郭红霞, 罗尹虹, 张凤祁, 丁李利
Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation
Xiaoyu Pan(潘霄宇), Hongxia Guo(郭红霞), Yinhong Luo(罗尹虹), Fengqi Zhang(张凤祁), Lili Ding(丁李利)
中国物理B . 2018, (3): 38501 -038501 .  DOI: 10.1088/1674-1056/27/3/038501