×
模态框（Modal）标题
在这里添加一些文本
关闭
关闭
提交更改
取消
确定并提交
×
模态框（Modal）标题
在这里添加一些文本
关闭
Bulk and surface damages in complementary bipolar junction transistors produced by high dose irradiation
J Assaf
Bulk and surface damages in complementary bipolar junction transistors produced by high dose irradiation
J Assaf
中国物理B . 2018, (
1
): 16103 -016103 . DOI: 10.1088/1674-1056/27/1/016103