Near-interface oxide traps in 4H-SiC MOS structures fabricated with and without annealing in NO
孙秋杰, 张玉明, 宋庆文, 汤晓燕, 张艺蒙, 李诚瞻, 赵艳黎, 张义门
Near-interface oxide traps in 4H-SiC MOS structures fabricated with and without annealing in NO
Qiu-Jie Sun(孙秋杰), Yu-Ming Zhang(张玉明), Qing-Wen Song(宋庆文), Xiao-Yan Tang(汤晓燕), Yi-Meng Zhang(张艺蒙), Cheng-Zhan Li(李诚瞻), Yan-Li Zhao(赵艳黎), Yi-Men Zhang(张义门)
中国物理B
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2017, (12): 127701
-127701
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DOI: 10.1088/1674-1056/26/12/127701