Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier

韩铁成, 赵红东, 杨磊, 王杨

Tie-Cheng Han(韩铁成), Hong-Dong Zhao(赵红东), Lei Yang(杨磊), Yang Wang(王杨)

中国物理B . 2017, (10): 107301 -107301 . DOI: 10.1088/1674-1056/26/10/107301