Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET
闫薇薇, 高林春, 李晓静, 赵发展, 曾传滨, 罗家俊, 韩郑生
Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET
Wei-Wei Yan(闫薇薇), Lin-Chun Gao(高林春), Xiao-Jing Li(李晓静), Fa-Zhan Zhao(赵发展), Chuan-Bin Zeng(曾传滨), Jia-Jun Luo(罗家俊), Zheng-Sheng Han(韩郑生)
中国物理B
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2017, (9): 98505
-098505
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DOI: 10.1088/1674-1056/26/9/098505