Improvement of reverse blocking performance in vertical power MOSFETs with Schottky-drain-connected semisuperjunctions
毛维, 王海永, 王晓飞, 杜鸣, 张金风, 郑雪峰, 王冲, 马晓华, 张进成, 郝跃
Improvement of reverse blocking performance in vertical power MOSFETs with Schottky-drain-connected semisuperjunctions
Wei Mao(毛维), Hai-Yong Wang(王海永), Xiao-Fei Wang(王晓飞), Ming Du(杜鸣), Jin-Feng Zhang(张金风), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃)
中国物理B
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2017, (4): 47306
-047306
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DOI: 10.1088/1674-1056/26/4/047306