Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment
何云龙, 王冲, 宓珉瀚, 郑雪峰, 张濛, 赵梦荻, 张恒爽, 陈立香, 张进成, 马晓华, 郝跃
Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment
Yun-Long He(何云龙), Chong Wang(王冲), Min-Han Mi(宓珉瀚), Xue-Feng Zheng(郑雪峰), Meng Zhang(张濛), Meng-Di Zhao(赵梦荻), Heng-Shuang Zhang(张恒爽), Li-Xiang Chen(陈立香), Jin-Cheng Zhang(张进成), Xiao-Hua Ma(马晓华), Yue Hao(郝跃)
中国物理B
.
2016, (11): 117305
-117305
.
DOI: 10.1088/1674-1056/25/11/117305