Proper In deposition amount for on-demand epitaxy of InAs/GaAs single quantum dots
尚向军, 徐建星, 马奔, 陈泽升, 魏思航, 李密峰, 查国伟, 张立春, 喻颖, 倪海桥, 牛智川
Proper In deposition amount for on-demand epitaxy of InAs/GaAs single quantum dots
Xiang-Jun Shang(尚向军), Jian-Xing Xu(徐建星), Ben Ma(马奔), Ze-Sheng Chen(陈泽升), Si-Hang Wei(魏思航), Mi-Feng Li(李密峰), Guo-Wei Zha(查国伟), Li-Chun Zhang(张立春), Ying Yu(喻颖), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川)
中国物理B
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2016, (10): 107805
-107805
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DOI: 10.1088/1674-1056/25/10/107805