Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal-oxide-semiconductor devices
贾一凡, 吕红亮, 钮应喜, 李玲, 宋庆文, 汤晓燕, 李诚瞻, 赵艳黎, 肖莉, 王梁永, 唐光明, 张义门, 张玉明
Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal-oxide-semiconductor devices
Yifan Jia(贾一凡), Hongliang Lv(吕红亮), Yingxi Niu(钮应喜), Ling Li(李玲), Qingwen Song(宋庆文), Xiaoyan Tang(汤晓燕), Chengzhan Li(李诚瞻), Yanli Zhao(赵艳黎), Li Xiao(肖莉), Liangyong Wang(王梁永), Guangming Tang(唐光明), Yimen Zhang(张义门), Yuming Zhang(张玉明)
中国物理B
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2016, (9): 97101
-097101
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DOI: 10.1088/1674-1056/25/9/097101