Temperature- and voltage-dependent trap generation model in high-
k metal gate MOS device with percolation simulation
徐昊, 杨红, 王艳蓉, 王文武, 罗维春, 祁路伟, 李俊峰, 赵超, 陈大鹏, 叶甜春
Temperature- and voltage-dependent trap generation model in high-
k metal gate MOS device with percolation simulation
Hao Xu(徐昊), Hong Yang(杨红), Yan-Rong Wang(王艳蓉), Wen-Wu Wang(王文武), Wei-Chun Luo(罗维春), Lu-Wei Qi(祁路伟), Jun-Feng Li(李俊峰), Chao Zhao(赵超), Da-Peng Chen(陈大鹏), Tian-Chun Ye(叶甜春)
中国物理B
.
2016, (8): 87306
-087306
.
DOI: 10.1088/1674-1056/25/8/087306