A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology
李欧鹏, 张勇, 徐锐敏, 程伟, 王元, 牛斌, 陆海燕
A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology
Ou-Peng Li(李欧鹏), Yong Zhang(张勇), Rui-Min Xu(徐锐敏), Wei Cheng(程伟), Yuan Wang(王元), Bing Niu(牛斌), Hai-Yan Lu(陆海燕)
中国物理B
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2016, (5): 58401
-058401
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DOI: 10.1088/1674-1056/25/5/058401