Growth mechanism of atomic-layer-deposited TiAlC metal gatebased on TiCl
4 and TMA precursors
项金娟, 丁玉强, 杜立永, 李俊峰, 王文武, 赵超
Growth mechanism of atomic-layer-deposited TiAlC metal gatebased on TiCl
4 and TMA precursors
Jinjuan Xiang(项金娟), Yuqiang Ding(丁玉强), Liyong Du(杜立永), Junfeng Li(李俊峰),Wenwu Wang(王文武), Chao Zhao(赵超)
中国物理B
.
2016, (3): 37308
-037308
.
DOI: 10.1088/1674-1056/25/3/037308