Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode
钟健, 姚尧, 郑越, 杨帆, 倪毅强, 贺致远, 沈震, 周桂林, 周德秋, 吴志盛, 张伯君, 刘扬
Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode
Zhong Jian (钟健), Yao Yao (姚尧), Zheng Yue (郑越), Yang Fan (杨帆), Ni Yi-Qiang (倪毅强), He Zhi-Yuan (贺致远), Shen Zhen (沈震), Zhou Gui-Lin (周桂林), Zhou De-Qiu (周德秋), Wu Zhi-Sheng (吴志盛), Zhang Bai-Jun (张伯君), Liu Yang (刘扬)
中国物理B
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2015, (9): 97303
-097303
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DOI: 10.1088/1674-1056/24/9/097303