Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN
李晓静, 赵德刚, 江德生, 陈平, 朱建军, 刘宗顺, 乐伶聪, 杨静, 何晓光, 张立群, 刘建平, 张书明, 杨辉
Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN
Li Xiao-Jing (李晓静), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Chen Ping (陈平), Zhu Jian-Jun (朱建军), Liu Zong-Shun (刘宗顺), Le Ling-Cong (乐伶聪), Yang Jing (杨静), He Xiao-Guang (何晓光), Zhang Li-Qun (张立群), Liu Jian-Ping (刘建平), Zhang Shu-Ming (张书明), Yang Hui (杨辉)
中国物理B
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2015, (9): 96804
-096804
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DOI: 10.1088/1674-1056/24/9/096804