×
模态框（Modal）标题
在这里添加一些文本
关闭
关闭
提交更改
取消
确定并提交
×
模态框（Modal）标题
在这里添加一些文本
关闭
Characteristics of drain-modulated generation current in n-type metal-oxide-semiconductor field-effect transistor
陈海峰, 过立新, 郑璞阳, 董钊, 张茜
Characteristics of drain-modulated generation current in n-type metal-oxide-semiconductor field-effect transistor
Chen Hai-Feng (陈海峰), Guo Li-Xin (过立新), Zheng Pu-Yang (郑璞阳), Dong Zhao (董钊), Zhang Qian (张茜)
中国物理B . 2015, (
7
): 78502 -078502 . DOI: 10.1088/1674-1056/24/7/078502