Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors
钱慧敏, 于广, 陆海, 武辰飞, 汤兰凤, 周东, 任芳芳, 张荣, 郑有炓, 黄晓明
Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors
Qian Hui-Min (钱慧敏), Yu Guang (于广), Lu Hai (陆海), Wu Chen-Fei (武辰飞), Tang Lan-Feng (汤兰凤), Zhou Dong (周东), Ren Fang-Fang (任芳芳), Zhang Rong (张荣), Zheng You-Liao (郑有炓), Huang Xiao-Ming (黄晓明)
中国物理B
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2015, (7): 77307
-077307
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DOI: 10.1088/1674-1056/24/7/077307