Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate
倪毅强, 贺致远, 姚尧, 杨帆, 周德秋, 周桂林, 沈震, 钟健, 郑越, 张佰君, 刘扬
Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate
Ni Yi-Qiang (倪毅强), He Zhi-Yuan (贺致远), Yao Yao (姚尧), Yang Fan (杨帆), Zhou De-Qiu (周德秋), Zhou Gui-Lin (周桂林), Shen Zhen (沈震), Zhong Jian (钟健), Zheng Yue (郑越), Zhang Bai-Jun (张佰君), Liu Yang (刘扬)
中国物理B
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2015, (5): 57303
-057303
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DOI: 10.1088/1674-1056/24/5/057303