Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor
周幸叶, 冯志红, 王元刚, 顾国栋, 宋旭波, 蔡树军
Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor
Zhou Xing-Ye (周幸叶), Feng Zhi-Hong (冯志红), Wang Yuan-Gang (王元刚), Gu Guo-Dong (顾国栋), Song Xu-Bo (宋旭波), Cai Shu-Jun (蔡树军)
Chin. Phys. B
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2015, (4): 48503
-048503
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DOI: 10.1088/1674-1056/24/4/048503