Effects of GaN cap layer thickness on an AlN/GaN heterostructure
赵景涛, 林兆军, 栾崇彪, 吕元杰, 冯志宏, 杨铭
Effects of GaN cap layer thickness on an AlN/GaN heterostructure
Zhao Jing-Tao (赵景涛), Lin Zhao-Jun (林兆军), Luan Chong-Biao (栾崇彪), Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志宏), Yang Ming (杨铭)
Chin. Phys. B
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2014, (12): 127104
-127104
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DOI: 10.1088/1674-1056/23/12/127104