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Effects of different dopants on switching behavior of HfO
2
-based resistive random access memory
邓宁, 庞华, 吴畏
Effects of different dopants on switching behavior of HfO
2
-based resistive random access memory
Deng Ning (邓宁), Pang Hua (庞华), Wu Wei (吴畏)
Chin. Phys. B . 2014, (
10
): 107306 -107306 . DOI: 10.1088/1674-1056/23/10/107306