An analytic model for gate-all-around silicon nanowire tunneling field effect transistors
刘颖, 何进, 陈文新, 杜彩霞, 叶韵, 赵巍, 吴文, 邓婉玲, 王文平
An analytic model for gate-all-around silicon nanowire tunneling field effect transistors
Liu Ying (刘颖), He Jin (何进), Chan Mansun (陈文新), Du Cai-Xia (杜彩霞), Ye Yun (叶韵), Zhao Wei (赵巍), Wu Wen (吴文), Deng Wan-Ling (邓婉玲), Wang Wen-Ping (王文平)
Chin. Phys. B
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2014, (9): 97102
-097102
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DOI: 10.1088/1674-1056/23/9/097102