A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor
毛维, 佘伟波, 杨翠, 张超, 张进成, 马晓华, 张金风, 刘红侠, 杨林安, 张凯, 赵胜雷, 陈永和, 郑雪峰, 郝跃
A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor
Mao Wei (毛维), She Wei-Bo (佘伟波), Yang Cui (杨翠), Zhang Chao (张超), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Zhang Jin-Feng (张金风), Liu Hong-Xia (刘红侠), Yang Lin-An (杨林安), Zhang Kai (张凯), Zhao Sheng-Lei (赵胜雷), Chen Yong-He (陈永和), Zheng Xue-Feng (郑雪峰), Hao Yue (郝跃)
Chin. Phys. B
.
2014, (8): 87305
-087305
.
DOI: 10.1088/1674-1056/23/8/087305