Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
吕元杰, 冯志红, 林兆军, 郭红雨, 顾国栋, 尹甲运, 王元刚, 徐鹏, 宋旭波, 蔡树军
Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Lin Zhao-Jun (林兆军), Guo Hong-Yu (郭红雨), Gu Guo-Dong (顾国栋), Yin Jia-Yun (尹甲运), Wang Yuan-Gang (王元刚), Xu Peng (徐鹏), Song Xu-Bo (宋旭波), Cai Shu-Jun (蔡树军)
Chin. Phys. B
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2014, (7): 77105
-077105
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DOI: 10.1088/1674-1056/23/7/077105