Improved crystal quality of GaN film with the in-plane lattice-matched In <sub>0.17</sub>Al <sub>0.83</sub>N interlayer grown on sapphire substrate using pulsed metal

Improved crystal quality of GaN film with the in-plane lattice-matched In _0.17Al _0.83N interlayer grown on sapphire substrate using pulsed metal–organic chemical vapor deposition

李亮, 杨林安, 薛军帅, 曹荣涛, 许晟瑞, 张进成, 郝跃

Improved crystal quality of GaN film with the in-plane lattice-matched In _0.17Al _0.83N interlayer grown on sapphire substrate using pulsed metal–organic chemical vapor deposition

Li Liang (李亮), Yang Lin-An (杨林安), Xue Jun-Shuai (薛军帅), Cao Rong-Tao (曹荣涛), Xu Sheng-Rui (许晟瑞), Zhang Jin-Cheng (张进成), Hao Yue (郝跃)

中国物理B . 2014, (6): 67103 -067103 . DOI: 10.1088/1674-1056/23/6/067103