Time-dependent degradation of threshold voltage in AlGaN/GaN high electron mobility transistors
马晓华, 姜元祺, 王鑫华, 吕敏, 张霍, 陈伟伟, 刘新宇
Time-dependent degradation of threshold voltage in AlGaN/GaN high electron mobility transistors
Ma Xiao-Hua (马晓华), Jiang Yuan-Qi (姜元祺), Wang Xin-Hua (王鑫华), Lü Min (吕敏), Zhang Huo (张霍), Chen Wei-Wei (陈伟伟), Liu Xin-Yu (刘新宇)
Chin. Phys. B
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2014, (1): 17303
-017303
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DOI: 10.1088/1674-1056/23/1/017303