0.15-μm T-gate In
0.52Al
0.48As/In
0.53Ga
0.47As InP-based HEMT with
f
max of 390 GHz
钟英辉, 张玉明, 张义门, 王显泰, 吕红亮, 刘新宇, 金智
0.15-μm T-gate In
0.52Al
0.48As/In
0.53Ga
0.47As InP-based HEMT with
f
max of 390 GHz
Zhong Ying-Hui (钟英辉), Zhang Yu-Ming (张玉明), Zhang Yi-Men (张义门), Wang Xian-Tai (王显泰), Lü Hong-Liang (吕红亮), Liu Xin-Yu (刘新宇), Jin Zhi (金智)
中国物理B
.
2013, (12): 128503
-128503
.
DOI: 10.1088/1674-1056/22/12/128503