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A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain
邓永辉, 谢刚, 汪涛, 盛况
A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain
Deng Yong-Hui (邓永辉), Xie Gang (谢刚), Wang Tao (汪涛), Sheng Kuang (盛况)
中国物理B . 2013, (
9
): 97201 -097201 . DOI: 10.1088/1674-1056/22/9/097201