Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory
张楷亮, 刘凯, 王芳, 尹富红, 韦晓莹, 赵金石
Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory
Zhang Kai-Liang (张楷亮), Liu Kai (刘凯), Wang Fang (王芳), Yin Fu-Hong (尹富红), Wei Xiao-Ying (韦晓莹), Zhao Jin-Shi (赵金石)
中国物理B
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2013, (9): 97101
-097101
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DOI: 10.1088/1674-1056/22/9/097101