Electrical properties of MOCVD-grown GaN on Si (111) substrates with low-temperature AlN interlayers
倪毅强, 贺致远, 钟健, 姚尧, 杨帆, 向鹏, 张佰君, 刘扬
Electrical properties of MOCVD-grown GaN on Si (111) substrates with low-temperature AlN interlayers
Ni Yi-Qiang (倪毅强), He Zhi-Yuan (贺致远), Zhong Jian (钟健), Yao Yao (姚尧), Yang Fan (杨帆), Xiang Peng (向鹏), Zhang Bai-Jun (张佰君), Liu Yang (刘扬)
中国物理B
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2013, (8): 88104
-088104
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DOI: 10.1088/1674-1056/22/8/088104