Effect of Si-doped In
0.49Ga
0.51P barrier layer on the device performance of In
0.4Ga
0.6As MOSFETs grown onsemi-insulating GaAs substrate
常虎东, 孙兵, 薛百清, 刘桂明, 赵威, 王盛凯, 刘洪刚
Effect of Si-doped In
0.49Ga
0.51P barrier layer on the device performance of In
0.4Ga
0.6As MOSFETs grown onsemi-insulating GaAs substrate
Chang Hu-Dong (常虎东), Sun Bing (孙兵), Xue Bai-Qing (薛百清), Liu Gui-Ming (刘桂明), Zhao Wei (赵威), Wang Sheng-Kai (王盛凯), Liu Hong-Gang (刘洪刚)
中国物理B
.
2013, (7): 77306
-077306
.
DOI: 10.1088/1674-1056/22/7/077306