Effects of prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure
曹文彧, 贺永发, 陈钊, 杨薇, 杜为民, 胡晓东
Effects of prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure
Cao Wen-Yu (曹文彧), He Yong-Fa (贺永发), Chen Zhao (陈钊), Yang Wei (杨薇), Du Wei-Min (杜为民), Hu Xiao-Dong (胡晓东)
中国物理B
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2013, (7): 76803
-076803
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DOI: 10.1088/1674-1056/22/7/076803