AlGaN/GaN high-electron-mobility transistor with transparent gate by Al-doped ZnO
王冲, 何云龙, 郑雪峰, 马晓华, 张进成, 郝跃
AlGaN/GaN high-electron-mobility transistor with transparent gate by Al-doped ZnO
Wang Chong (王冲), He Yun-Long (何云龙), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃)
中国物理B
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2013, (6): 68503
-068503
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DOI: 10.1088/1674-1056/22/6/068503