A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor
孙亚宾, 付军, 许军, 王玉东, 周卫, 张伟, 崔杰, 李高庆, 刘志弘, 余永涛, 马英起, 封国强, 韩建伟
A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor
Sun Ya-Bin (孙亚宾), Fu Jun (付军), Xu Jun (许军), Wang Yu-Dong (王玉东), Zhou Wei (周卫), Zhang Wei (张伟), Cui Jie (崔杰), Li Gao-Qing (李高庆), Liu Zhi-Hong (刘志弘), Yu Yong-Tao (余永涛), Ma Ying-Qi (马英起), Feng Guo-Qiang (封国强), Han Jian-Wei (韩建伟)
中国物理B
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2013, (5): 56103
-056103
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DOI: 10.1088/1674-1056/22/5/056103