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Degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress
石磊, 冯士维, 郭春生, 朱慧, 万宁
Degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress
Shi Lei (石磊), Feng Shi-Wei (冯士维), Guo Chun-Sheng (郭春生), Zhu Hui (朱慧), Wan Ning (万宁)
中国物理B . 2013, (
2
): 27201 -027201 . DOI: 10.1088/1674-1056/22/2/027201