0.6-eV bandgap In
0.69Ga
0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP
1-y buffers
季莲, 陆书龙, 江德生, 赵勇明, 谭明, 朱亚棋, 董建荣
0.6-eV bandgap In
0.69Ga
0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP
1-y buffers
Ji Lian (季莲), Lu Shu-Long (陆书龙), Jiang De-Sheng (江德生), Zhao Yong-Ming (赵勇明), Tan Ming (谭明), Zhu Ya-Qi (朱亚棋), Dong Jian-Rong (董建荣 )
中国物理B
.
2013, (2): 26802
-026802
.
DOI: 10.1088/1674-1056/22/2/026802