×
模态框(Modal)标题
在这里添加一些文本
关闭
关闭
提交更改
取消
确定并提交
×
模态框(Modal)标题
在这里添加一些文本
关闭
Impact of GaNAs strain compensation layer on the electronic structure of InAs/GaAs quantum dots
宋鑫, 冯淏, 刘玉敏, 俞重远, 刘建涛
Impact of GaNAs strain compensation layer on the electronic structure of InAs/GaAs quantum dots
Song Xin (宋鑫), Feng Hao (冯淏), Liu Yu-Min (刘玉敏), Yu Zhong-Yuan (俞重远), Liu Jian-Tao (刘建涛)
Chin. Phys. B . 2013, (
1
): 17304 -017304 . DOI: 10.1088/1674-1056/22/1/017304