Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal–semiconductor field-effect transistor
张现军, 杨银堂, 段宝兴, 柴常春, 宋坤, 陈斌
Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal–semiconductor field-effect transistor
Zhang Xian-Jun (张现军), Yang Yin-Tang (杨银堂), Duan Bao-Xing (段宝兴), Chai Chang-Chun (柴常春), Song Kun (宋坤), Chen Bin (陈斌)
中国物理B
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2012, (9): 97302
-097302
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DOI: 10.1088/1674-1056/21/9/097302