Performance of La
2O
3/InAlN/GaN metal–oxide–semiconductor high electron mobility transistors
冯倩, 李倩, 邢韬, 王强, 张进成, 郝跃
Performance of La
2O
3/InAlN/GaN metal–oxide–semiconductor high electron mobility transistors
Feng Qian(冯倩), Li Qian(李倩), Xing Tao(邢韬) Wang Qiang(王强), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃)
中国物理B
.
2012, (6): 67305
-067305
.
DOI: 10.1088/1674-1056/21/6/067305
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