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A threshold voltage analytical model for high-k gate dielectric MOSFETs with fully overlapped lightly doped drain structures
马飞, 刘红侠, 匡潜玮, 樊继斌
A threshold voltage analytical model for high-
k
gate dielectric MOSFETs with fully overlapped lightly doped drain structures
Ma Fei(马飞), Liu Hong-Xia(刘红侠), Kuang Qian-Wei(匡潜玮), and Fan Ji-Bin(樊继斌)
中国物理B . 2012, (
5
): 57304 -057304 . DOI: 10.1088/1674-1056/21/5/057304