Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n +-layer
胡盛东, 吴丽娟, 周建林, 甘平, 张波, 李肇基
中国物理B . 2012, (2): 27101 -027101 .  DOI: 10.1088/1674-1056/21/2/027101