The breakdown mechanism of a high-side pLDMOS based on a thin-layer silicon-on-insulator structure

赵远远, 乔明, 王伟宾, 王猛, 张波

Zhao Yuan-Yuan(赵远远), Qiao Ming(乔明), Wang Wei-Bin(王伟宾), Wang Meng(王猛), and Zhang Bo(张波)

中国物理B . 2012, (1): 18501 -018501 . DOI: 10.1088/1674-1056/21/1/018501