Analysis and simulation of a 4H-SiC semi-superjunction Schottky barrier diode for softer reverse-recovery
曹琳, 蒲红斌, 陈治明, 臧源
Analysis and simulation of a 4H-SiC semi-superjunction Schottky barrier diode for softer reverse-recovery
Cao Lin(曹琳), Pu Hong-Bin(蒲红斌), Chen Zhi-Ming(陈治明), and Zang Yuan(臧源)
中国物理B . 2012, (1): 17303 -017303 .  DOI: 10.1088/1674-1056/21/1/017303