An improvement to computational efficiency of the drain current model for double-gate MOSFET
周幸叶, 张健, 周致赜, 张立宁, 马晨月, 吴文, 赵巍, 张兴
An improvement to computational efficiency of the drain current model for double-gate MOSFET
Zhou Xing-Ye(周幸叶), Zhang Jian(张健), Zhou Zhi-Ze(周致赜), Zhang Li-Ning(张立宁), Ma Chen-Yue(马晨月), Wu Wen(吴文), Zhao Wei(赵巍), and Zhang Xing(张兴)
中国物理B
.
2011, (9): 97304
-097304
.
DOI: 10.1088/1674-1056/20/9/097304