A–188 V 7.2 Ω·mm
2, P-channel high voltage device formed on an epitaxy-SIMOX substrate
吴丽娟, 胡盛东, 张波, 罗小蓉, 李肇基
A–188 V 7.2 Ω·mm
2, P-channel high voltage device formed on an epitaxy-SIMOX substrate
Wu Li-Juan(吴丽娟), Hu Sheng-Dong(胡盛东), Zhang Bo(张波), Luo Xiao-Rong(罗小蓉), and Li Zhao-Ji(李肇基)
中国物理B
.
2011, (8): 87101
-087101
.
DOI: 10.1088/1674-1056/20/8/087101
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