Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network

程知群, 胡莎, 刘军

Cheng Zhi-Qun(程知群), Hu Sha(胡莎), Liu Jun(刘军), and Zhang Qi-Jun

中国物理B . 2011, (3): 36106 -036106 . DOI: 10.1088/1674-1056/20/3/036106