Evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistors by structure function method
张光沉, 冯士维, 周舟, 李静婉, 郭春生
Evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistors by structure function method
Zhang Guang-Chen(张光沉), Feng Shi-Wei(冯士维), Zhou Zhou(周舟), Li Jing-Wan(李静婉),and Guo Chun-Sheng(郭春生)
中国物理B . 2011, (2): 27202 -027202 .  DOI: 10.1088/1674-1056/20/2/027202